The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2006

Filed:

Aug. 05, 2004
Applicants:

Je Won Kim, Seoul, KR;

Jeong Tak OH, Kyungki-do, KR;

Dong Joon Kim, Seoul, KR;

Sun Woon Kim, Kyungki-do, KR;

Soo Min Lee, Seoul, KR;

Inventors:

Je Won Kim, Seoul, KR;

Jeong Tak Oh, Kyungki-do, KR;

Dong Joon Kim, Seoul, KR;

Sun Woon Kim, Kyungki-do, KR;

Soo Min Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.


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