The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Apr. 01, 2004
Ju-cheol Shin, Seoul, KR;
Hong-mi Park, Gyeonggi-do, KR;
In-sun Park, Gyeonggi-do, KR;
Hyeon-deok Lee, Seoul, KR;
Ju-Cheol Shin, Seoul, KR;
Hong-Mi Park, Gyeonggi-do, KR;
In-Sun Park, Gyeonggi-do, KR;
Hyeon-Deok Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a method of manufacturing a semiconductor device, a tungsten layer pattern having an oxidized surface is formed on a substrate. A source gas including silicon is provided to the oxidized surface of the tungsten layer pattern to form a protecting layer on the oxidized surface of the tungsten layer pattern. The protecting layer prevents an abnormal growth of oxide contained in the oxidized surface. The protecting layer prevents a whisker from growing from the oxidized surface of the tungsten layer pattern.