The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2006

Filed:

Sep. 13, 2004
Applicants:

Calvin T. Gabriel, Cupertino, CA (US);

Jeffrey Shields, Sunnyvale, CA (US);

Inventors:

Calvin T. Gabriel, Cupertino, CA (US);

Jeffrey Shields, Sunnyvale, CA (US);

Assignees:

Spansion LLC, Sunnyvale, CA (US);

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 31/00 (2006.01); H01L 29/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of making a semiconductor structure are disclosed. A refractory metal layer containing W, TiW, Ta, or TaN and semiconductor layer are formed on a substrate that contains copper in, for example, a via therein. A portion of the refractory metal layer and semiconductor layer is removed by etching using a fluorine-containing compound. By using W, TiW, Ta, or TaN as the refractory metal layer material and employing fluorine-based etching, the copper portion in the substrate is not substantially etched, thus preventing corrosion of the copper portion.


Find Patent Forward Citations

Loading…