The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Mar. 24, 2003
Applicants:
Kotaro Kataoka, Tenri, JP;
Hiroshi Iwata, Nara, JP;
Masayuki Nakano, Tenri, JP;
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100 ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well.
Kataoka, Kotaro. (2006). Process for fabricating a semiconductor device (U.S. Patent No. 7135386). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7135386
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile