The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Dec. 26, 2003
Kwan-ju Koh, Bucheon, KR;
Kwan-Ju Koh, Bucheon, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method of forming a MOS transistor is disclosed. An example method forms an insulating film and a first silicon layer on a semiconductor substrate in order. The example method forms an impurity region by injecting impurity ions into a predetermined region of the first silicon layer, forms a common source line by forming a second silicon layer on the impurity region, and then injecting impurity ions into the second silicon layer. The example method also forms a gate oxide over whole surfaces of the first silicon layer and the common source line, forms side walls made of insulating film on the gate oxide film positioned at sides of the common source line, forms drain regions by injecting impurity ions into the first silicon layer being positioned at a predetermined distance from the common source line, and forms gate electrodes on sides of the side walls.