The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
May. 31, 2005
Applicants:
Tomohiko Tsutsumi, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Inventors:
Tomohiko Tsutsumi, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is processed to form a silicide block on the resistance element, and side wall spacers at both side surfaces of gate electrodes, and so on, of respective transistors, at the same time.