The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jan. 09, 2006
David D. Smith, San Jose, CA (US);
Michael J. Cudzinovic, Sunnyvale, CA (US);
Keith R. Mcintosh, Newport, AU;
Bharatkumar Gamanlal Mehta, Austin, TX (US);
David D. Smith, San Jose, CA (US);
Michael J. Cudzinovic, Sunnyvale, CA (US);
Keith R. McIntosh, Newport, AU;
Bharatkumar Gamanlal Mehta, Austin, TX (US);
Sunpower Corporation, San Jose, CA (US);
Abstract
In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.