The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2006

Filed:

Dec. 13, 2004
Applicants:

John E. Freeman, Kempton, IN (US);

William J. Baney, Kokomo, IN (US);

Timothy M. Betzner, Kokomo, IN (US);

Dan W. Chilcott, Greentown, IN (US);

John C. Christenson, Kokomo, IN (US);

Timothy A. Vas, Kokomo, IN (US);

George M Queen, Kokomo, IN (US);

Stephen P Long, Tipton, IN (US);

Inventors:

John E. Freeman, Kempton, IN (US);

William J. Baney, Kokomo, IN (US);

Timothy M. Betzner, Kokomo, IN (US);

Dan W. Chilcott, Greentown, IN (US);

John C. Christenson, Kokomo, IN (US);

Timothy A. Vas, Kokomo, IN (US);

George M Queen, Kokomo, IN (US);

Stephen P Long, Tipton, IN (US);

Assignee:

Delphi Technologies, Inc., Troy, MI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04R 31/00 (2006.01); H01L 2/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.


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