The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Mar. 22, 2004
Applicants:
Sudhir Kumar Madan, Richardson, TX (US);
Sung-wei Lin, Plano, TX (US);
Hugh P. Mcadams, McKinney, TX (US);
Anand Seshadri, Plano, TX (US);
Jarrod Eliason, Colorado Springs, CO (US);
Inventors:
Sudhir Kumar Madan, Richardson, TX (US);
Sung-Wei Lin, Plano, TX (US);
Hugh P. McAdams, McKinney, TX (US);
Anand Seshadri, Plano, TX (US);
Jarrod Eliason, Colorado Springs, CO (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and ferroelectric devices are presented, in which pulses are selectively applied to ferroelectric memory cell wordlines to discharge cell storage node disturbances while the cell plateline and the associated bitline are held at substantially the same voltage.