The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2006

Filed:

Nov. 14, 2002
Applicants:

Joon Park, Gardena, CA (US);

Ron K. Nakahira, Buena Park, CA (US);

Robert C. Allison, Rancho P.V., CA (US);

Inventors:

Joon Park, Gardena, CA (US);

Ron K. Nakahira, Buena Park, CA (US);

Robert C. Allison, Rancho P.V., CA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radio frequency (RF) micro electro-mechanical system (MEMS) device and method of making same are provided, the device including an RF circuit substrate and an RF conducting path disposed on the RF circuit substrate, a piezoelectric thin film actuator, and a conducting path electrode. The piezoelectric thin film actuator has a proximal end that is fixed relative to the RF circuit substrate and a cantilever end that is spaced from the RF circuit substrate. The conducting path electrode is disposed on the cantilever end of the piezoelectric thin film actuator. The cantilever end of the piezoelectric thin film actuator is movable between a first position whereat the conducting path electrode is spaced from the RF path electrode and a second position whereat the conducting path electrode is spaced from the RF path electrode a second distance, wherein the second distance is less than the first distance. The RF MEMS device is particularly useful as a tunable capacitor. The RF MEMS device requires lower operating voltage, and provides variable RF tuning capacity, fewer stiction problems, simplified fabrication, and an improved switching time.


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