The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Aug. 29, 2003
Kazutaka Yoshizawa, Kawasaki, JP;
Kazuki Sato, Kawasaki, JP;
Shinichiroh Ikemasu, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An interlayer insulation film is etched to form contact holes in an integrated circuit part. At this time, a trench is not formed in a guard ring part. Subsequently, ion implantation is carried out in source/drain regions in a peripheral circuit part for contact compensation, and high-temperature annealing is carried out in order to activate implanted impurities. Subsequently, an interlayer insulation film, a storage capacitor, and another interlayer insulation film are formed in sequence. Then, contact holes reaching a part of wiring layers are formed in the peripheral circuit part while, in the guard ring part, a trench reaching a diffusion layer is formed. Next, a barrier metal film is formed in each of the contact holes and the trench, and further, a contact plug comprising, for example, a W film is buried therein.