The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Nov. 02, 2001
Yoshihisa Nagano, Suita, JP;
Toyoji Ito, Otsu, JP;
Sadayuki Imanishi, Kameoka, JP;
Eiji Fujii, Ibaraki, JP;
Yoshihisa Nagano, Suita, JP;
Toyoji Ito, Otsu, JP;
Sadayuki Imanishi, Kameoka, JP;
Eiji Fujii, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A capacitormade up of a lower electrodea capacitive insulating filmof an insulating metal oxide and an upper electrodeis formed over a semiconductor substrateA first-layer wireis formed on a passivation filmthat covers the capacitorA first interlevel dielectric filmis deposited to cover the first-layer wireA second interlevel dielectric filmis deposited over the first interlevel dielectric filmwith a barrier filmwhich overlaps the capacitorfor preventing hydrogen from diffusing, interposed therebetween. A second-layer wireis formed on the second interlevel dielectric filmThe first interlevel dielectric filmhas a hydrogen content lower than that of the second interlevel dielectric film