The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Oct. 05, 2003
Applicants:
Chen Ou, Hsin-Chu, TW;
Jia-rong Chang, Hsin-Chu, TW;
Chen-ke Hsu, Hsin-Chu, TW;
Chang-huei Jing, Hsin-Chu, TW;
Inventors:
Chen Ou, Hsin-Chu, TW;
Jia-Rong Chang, Hsin-Chu, TW;
Chen-Ke Hsu, Hsin-Chu, TW;
Chang-Huei Jing, Hsin-Chu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10L 31/0304 (2006.01);
U.S. Cl.
CPC ...
Abstract
A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.