Semiconductor light-emitting device and method for manufacturing the same

Abstract

It has a structure in which an active layer () that emits light by electric current injection is sandwiched between an n-type cladding layer () and a p-type cladding layer () made of materials having a larger band gap than the active layer (), wherein the active layer () is made, for example, of CdZnO (0≦x<1). It is further more preferable if the cladding layers (), () are made, for example, of MgZnO (0≦y<1). This narrows the band gap of the ZnO materials, and an oxide semiconductor capable of being wet-etched, easy to handle with, and excellent in crystallinity can be used as a material for an active layer or a cladding layer of a semiconductor light emitting device such as a blue light emitting diode or a blue laser diode in which an active layer is sandwiched between cladding layers, so that a blue semiconductor light emitting device being excellent in light emission characteristics can be obtained.