The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Dec. 08, 2005
Shunpei Yamazaki, Tokyo, JP;
Taketomi Asami, Kanagawa, JP;
Toru Takayama, Kanagawa, JP;
Ritsuko Kawasaki, Kanagawa, JP;
Hiroki Adachi, Kanagawa, JP;
Naoya Sakamoto, Kanagawa, JP;
Masahiko Hayakawa, Kanagawa, JP;
Hiroshi Shibata, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Taketomi Asami, Kanagawa, JP;
Toru Takayama, Kanagawa, JP;
Ritsuko Kawasaki, Kanagawa, JP;
Hiroki Adachi, Kanagawa, JP;
Naoya Sakamoto, Kanagawa, JP;
Masahiko Hayakawa, Kanagawa, JP;
Hiroshi Shibata, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Abstract
In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.