The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2006

Filed:

Jun. 26, 2001
Applicants:

Ratnakar Vispute, Columbia, MD (US);

Thirumalai Venkatesan, Washington, DC (US);

Wei Yang, Greenbelt, MD (US);

Supab Choopun, Chiang Mai, TH;

Inventors:

Ratnakar Vispute, Columbia, MD (US);

Thirumalai Venkatesan, Washington, DC (US);

Wei Yang, Greenbelt, MD (US);

Supab Choopun, Chiang Mai, TH;

Assignee:

University of Maryland, College Park, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Photoconductive devices () comprising MgZnO, that is preferably epitaxially deposited on a substrate (), optionally also including a buffer layer (), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device () having predetermined electrical and optical properties and first and second electrodes () deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source () is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.


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