The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2006

Filed:

Jan. 08, 2004
Applicants:

Mikio Hongo, Yokohama, JP;

Akio Yazaki, Yokohama, JP;

Mutsuko Hatano, Kokubunji, JP;

Hiroshi Saito, Fujisawa, JP;

Makoto Ohkura, Fuchu, JP;

Inventors:

Mikio Hongo, Yokohama, JP;

Akio Yazaki, Yokohama, JP;

Mutsuko Hatano, Kokubunji, JP;

Hiroshi Saito, Fujisawa, JP;

Makoto Ohkura, Fuchu, JP;

Assignees:

Hitachi, Ltd., Tokyo, JP;

Hitachi Displays, Ltd., Hayano Mobara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

The whole surface of an insulating substrate having an amorphous silicon film formed thereon is scanned/irradiated with a solid-state pulsed laser beam shaped linearly or rectangularly, to form a uniform fine poly-crystalline silicon film for forming a pixel region. The periphery of the pixel region is scanned/irradiated with a time-modulated continuous-wave solid-state laser beam formed linearly. Thus, a peripheral circuit region including a drive circuit is formed as a poly-crystalline silicon film with crystals growing up in the scanning direction. Pixel portion thin film transistors are produced in the uniform fine poly-crystalline silicon film, while a drive circuit or an interface circuit is produced in the peripheral circuit region. One of substrates of a display panel is formed thus. A display panel including transistors with uniform properties in the pixel portion and transistors with excellent properties in the peripheral circuit portion including the drive circuit is obtained.


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