The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Dec. 04, 2004
Henry A. Bonges, Iii, Milton, VT (US);
David L. Harmon, Essex Junction, VT (US);
Terence B. Hook, Jericho, VT (US);
Wing L. Lai, Williston, VT (US);
Henry A. Bonges, III, Milton, VT (US);
David L. Harmon, Essex Junction, VT (US);
Terence B. Hook, Jericho, VT (US);
Wing L. Lai, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a method and structure for altering an integrated circuit design having silicon over insulator (SOI) transistors. The method/structure prevents damage from charging during processing to the gate of SOI transistors by tracing electrical nets in the integrated circuit design, identifying SOI transistors that may have a voltage differential between the source/drain and gate as potentially damaged SOI transistors (based on the tracing of the electrical nets), and connecting a shunt device across the source/drain and the gate of each of the potentially damaged SOI transistors. Alternatively, the method/structure provides for connecting compensating conductors through a series device.