The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Oct. 17, 2002
Shuit-tong Lee, Yuen Long, HK;
Chi-pui LI, Taiwai, HK;
Xu-hui Sun, Ma An Shan, CN;
Ning-bew Wong, Quarry Bay, HK;
Chun-sing Lee, Kowloon, HK;
Boon-keng Teo, Chicago, IL (US);
Shuit-Tong Lee, Yuen Long, HK;
Chi-Pui Li, Taiwai, HK;
Xu-Hui Sun, Ma An Shan, CN;
Ning-Bew Wong, Quarry Bay, HK;
Chun-Sing Lee, Kowloon, HK;
Boon-Keng Teo, Chicago, IL (US);
City University of Hong Kong, Kowloon, HK;
Abstract
A simple chemical technique has been developed to grow large quantity of carbon nanostructures, including carbon nanotubes, hydrocarbon nanotubes and carbon nanoonions, in the organic solution at ambient (room) temperature and atmospheric pressure using silicon nanostructures (nanowires, nanodots, ribbons, and porous silicon) as starting materials. These CNT and CNO have the lattice d-spacing from 3.4 Å to 5 Å.