The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Dec. 29, 2003
Su Hwan OH, Daejeon-Shi, KR;
Moon Ho Park, Daejeon-Shi, KR;
Ji Myon Lee, Daejeon-Shi, KR;
Ki Soo Kim, Jeonju-Si, KR;
Chul Wook Lee, Daejeon-Shi, KR;
Hyun Sung Ko, Daejeon-Shi, KR;
Sahng Gi Park, Daejeon-Shi, KR;
Young Chul Chung, Seoul, KR;
Su Hyun Kim, Seoul, KR;
Su Hwan Oh, Daejeon-Shi, KR;
Moon Ho Park, Daejeon-Shi, KR;
Ji Myon Lee, Daejeon-Shi, KR;
Ki Soo Kim, Jeonju-Si, KR;
Chul Wook Lee, Daejeon-Shi, KR;
Hyun Sung Ko, Daejeon-Shi, KR;
Sahng Gi Park, Daejeon-Shi, KR;
Young Chul Chung, Seoul, KR;
Su Hyun Kim, Seoul, KR;
Electronics and Telecommunications Research Institute, KRX, unknown;
Abstract
The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.