The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
May. 20, 2003
Jiyang Wang, Jinan, CN;
Xin Yin, Jinan, CN;
Shaojun Zhang, Jinan, CN;
Xiaobo HU, Jinan, CN;
Huaijin Zhang, Jinan, CN;
Minhua Jiang, Jinan, CN;
Jiyang Wang, Jinan, CN;
Xin Yin, Jinan, CN;
Shaojun Zhang, Jinan, CN;
Xiaobo Hu, Jinan, CN;
Huaijin Zhang, Jinan, CN;
Minhua Jiang, Jinan, CN;
Shandong University, Shandong Province, CN;
Abstract
This invention is a kind of electrooptic Q-switch element made of a single crystal and belongs to the application of crystal in electrooptic technology field. The invention consists of electrooptic Q-switch which is made of LaGaSiOor Nd:LaGaSiOor the other related crystal materials such as LaGaAlSiO, SrGaGeSiO, NaCaGeO, CaGaGeO, LaGaNbOand LaGaTaOwith the common shape or a specific shape containing Brewster angle as shown in figure. This kind of electrooptic Q-switch can be used in YAG laser and other laser. It overcomes the shortages of the commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. The advantage of this kind of electrooptic Q-switch is its low, adjustable, high stable half-wave voltage.