The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2006

Filed:

Nov. 12, 2004
Applicants:

Georg J. Bednorz, Wolfhausen, CH;

David J. Gundlach, Adliswil, CH;

Siegfried F. Karg, Adliswil, CH;

Gerhard I. Meijer, Zurich, CH;

Heike E. Riel, Rueschlikon, CH;

Walter H. Riess, Thalwil, CH;

Inventors:

Georg J. Bednorz, Wolfhausen, CH;

David J. Gundlach, Adliswil, CH;

Siegfried F. Karg, Adliswil, CH;

Gerhard I. Meijer, Zurich, CH;

Heike E. Riel, Rueschlikon, CH;

Walter H. Riess, Thalwil, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A field effect device () includes a source electrode (), a drain electrode (), a channel () formed between the source electrode () and the drain electrode (), and a gate electrode () separated from the channel () by an insulating layer (), wherein the channel () comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.


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