The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2006

Filed:

Jul. 26, 2004
Applicants:

Tae-jin Kim, Seoul, KR;

Seung-wook Lee, Seoul, KR;

Byoung-soo Kim, Incheon-si, KR;

Yong-woo Kim, Seoul, KR;

Young-woong Kim, Gyeonggi-do, KR;

Jin-ho Shin, Gyeonggi-Do, KR;

Inventors:

Tae-Jin Kim, Seoul, KR;

Seung-Wook Lee, Seoul, KR;

Byoung-Soo Kim, Incheon-si, KR;

Yong-Woo Kim, Seoul, KR;

Young-Woong Kim, Gyeonggi-do, KR;

Jin-Ho Shin, Gyeonggi-Do, KR;

Assignee:

FCI Inc., , KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bias circuit for a smart power amplifier includes a high power mode bias circuit and a low power mode bias circuit, and operates only one of the bias circuits selectively using a switching circuit according to an input signal. Therefore, the bias circuit of high power mode and the bias circuit of the low power mode are divided and can be optimized according to characteristics of the power. Accordingly, a gain difference with respect to each power can be minimized and the low power mode can be controlled with a small amount of current in a state of initial current with a low power and in a middle power, such that an efficiency of the power amplifier can be improved at low power.


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