The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Sep. 19, 2002
Jean-pierre Nozieres, 38700 Corenc, FR;
Laurent Ranno, 38000 Grenoble, FR;
Yann Conraux, 38000 Grenoble, FR;
Jean-Pierre Nozieres, 38700 Corenc, FR;
Laurent Ranno, 38000 Grenoble, FR;
Yann Conraux, 38000 Grenoble, FR;
Other;
Abstract
The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction () consisting of: a magnetic layer, known as the trapped layer (), having hard magnetisation; a magnetic layer, known as the free layer (), the magnetisation of which may be reversed; and an insulating layer () which is disposed between the free layer () and the trapped layer () and which is in contact with both of said layers. The free layer () is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.