The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Oct. 06, 2004
Peyman Hadizad, Scottsdale, AZ (US);
Peyman Hadizad, Scottsdale, AZ (US);
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
In one embodiment, a compound semiconductor vertical FET device () includes a first trench () formed in a body of semiconductor material (), and a second trench () formed within the first trench () to define a channel region (). A doped gate region () is then formed on the sidewalls and the bottom surface of the second trench (). Source regions () are formed on opposite sides of the double trench structure (). Localized gate contact regions () couple individual doped gate regions () together. Contacts () are then formed to the localized gate contact regions (), the source regions (), and an opposing surface () of the body of semiconductor material (). The structure provides a compound semiconductor vertical FET device () having enhanced blocking capability and improved switching performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile