Electromagnetic radiation emitting semiconductor chip and procedure for its production

Abstract

Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface () is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack () based on GaN, which comprises an n-conducting semiconductor layer (), a p-conducting semiconductor layer () and an electromagnetic radiation generating region () which is arranged between these two semiconductor layers (). The surface of the p-conducting semiconductor layer () which faces away from the radiation-generating region () is provided with three-dimensional pyramid-like structures (). A mirror layer () is arranged over the whole of this textured surface. A textured reflection surface () is formed between the mirror layer () and the p-conducting semiconductor layer (). The textured reflection surface () can increase the amount of light which is decoupled at the radiation-outcoupling surface () by virtue of the fact that a beam (), after double reflection on the reflection surface (), is more likely not to be totally reflected.