The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Apr. 04, 2003
Hiroshi Shibata, Yamagata, JP;
Osamu Nakamura, Kanagawa, JP;
Shunichi Naka, Osaka, JP;
Tohru Ueda, Hiroshima, JP;
Hiroshi Shibata, Yamagata, JP;
Osamu Nakamura, Kanagawa, JP;
Shunichi Naka, Osaka, JP;
Tohru Ueda, Hiroshima, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.