The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Dec. 03, 2004
Le Thanh Pham, Ventura, CA (US);
Le Thanh Pham, Ventura, CA (US);
Raytheon Company, Waltham, MA (US);
Abstract
An infrared detector has a multi-layer structure to simultaneously detect IR energy in different spectral bands without changing polarity of a bias imposed across the detector. Two absorption layers are separated by a barrier layer that imposes an electrical potential barrier to one of the absorption layers. Under low bias in one direction, only one layer generates a photocurrent. Under a higher bias in the same direction, both layers generate a photocurrent. Additional absorption layers may be added to detect additional bands of energy, where the additional absorption layers generate photocurrent under a bias in another direction. Two, three, and four band detection is disclosed. Where absorbing layers within a single unit cell absorb under different bias direction, the barrier layer between those different bias direction layers suppresses a diffusing electron current. A method for detecting and resolving energy absorbed in two, three, and four different energy bands is also provided.