The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Dec. 04, 2003
Hideshi Miyajima, Yokohama, JP;
Kazuyuki Higashi, Yokohama, JP;
Keiji Fujita, Yokohama, JP;
Toshiaki Hasegawa, Kanagawa, JP;
Kiyotaka Tabuchi, Kanagawa, JP;
Hideshi Miyajima, Yokohama, JP;
Kazuyuki Higashi, Yokohama, JP;
Keiji Fujita, Yokohama, JP;
Toshiaki Hasegawa, Kanagawa, JP;
Kiyotaka Tabuchi, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Sony, Corp., Tokyo, JP;
Abstract
A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.