The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Aug. 27, 2003
Heike Drummer, Langebrück, DE;
Franz Kreupl, München, DE;
Annette Sänger, Dresden, DE;
Manfred Engelhardt, Feldkirchen-Westerham, DE;
Bernhard Sell, Portland, OR (US);
Peter Thieme, Dresden, DE;
Heike Drummer, Langebrück, DE;
Franz Kreupl, München, DE;
Annette Sänger, Dresden, DE;
Manfred Engelhardt, Feldkirchen-Westerham, DE;
Bernhard Sell, Portland, OR (US);
Peter Thieme, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor substrate is provided, on which there is arranged a first layer, a second layer and a third layer. The third layer is, for example, a resist mask that is used to pattern the second layer. The second layer is, for example, a patterned hard mask used to pattern the first layer. Then, the third layer is removed and a fourth layer is deposited. The fourth layer is, for example, an insulator that fills the trenches which have been formed in the first layer. Then, the fourth layer is planarized by a CMP step. The planarization is continued and the second layer, which is, for example, a hard mask, is removed from the first layer together with the fourth layer. The fourth layer remains in place in a trench which is arranged in the first layer.