The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Aug. 12, 2004
Martin Popp, Dresden, DE;
Andreas Wich-glasen, Langebrück, DE;
Martin Popp, Dresden, DE;
Andreas Wich-Glasen, Langebrück, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Process for producing a plurality of gate stacks approximately the same height and equidistant on a semiconductor substrate. The process includes providing a gate dielectric on the semiconductor substrate and applying and patterning at least a first layer and a second layer, above the first layer, to the gate dielectric to produce the gate stacks. An oblique implantation of an oxidation-inhibiting implantation species is carried out into two opposite, uncovered side faces of the second of the gate stacks, with respectively adjacent gate stacks serving to shadow the uncovered side faces of the first layer of the gate stacks. Oxidation to simultaneously form a first oxide layer on uncovered side faces of the first layer of the gate stacks and a second oxide layer on uncovered side faces of the second layer of the gate stacks is carried out, the thickness of the first oxide layer being greater than the thickness of the second oxide layer.