The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Jun. 21, 2003
Applicants:
Rodger Fehlhaber, München, DE;
Helmut Tews, München, DE;
Inventors:
Rodger Fehlhaber, München, DE;
Helmut Tews, München, DE;
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a short channel field-effect transistor is presented. A sublithographic gate sacrificial layer is formed, as are spacers at the side walls of the gate sacrificial layer. The gate sacrificial layer is removed to form a gate recess and a gate dielectric and a control layer are formed in the gate recess. The result is a short channel field-effect transistor with minimal fluctuations in the critical dimensions in a range below 100 nanometers.