The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Sep. 13, 2004
Steven C. Avanzino, Cupertino, CA (US);
Minh Tran, Milpitas, CA (US);
Steven C. Avanzino, Cupertino, CA (US);
Minh Tran, Milpitas, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Disclosed are methods and structures for fabrication of reliable and efficient memory cells. The methods involve formation of a conformal diffusion barrier layer in a via, deposition of an electrode material in the via, removal of a certain portion of the electrode material from the via to expose a the portion of the diffusion barrier layer, converting the exposed portion of the diffusion barrier layer into an oxide, forming a memory element film, and forming and patterning a top electrode. Improved electrical conduction and data retention from the memory element of a memory cell by preventing short circuits and leakage of current through the conductive diffusion barrier layer, and thereby enhanced reliability and performance of a memory cell are obtained.