The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Nov. 24, 2004
Nicholas D. Rizzo, Gilbert, AZ (US);
Renu W. Dave, Chandler, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Jason A. Janesky, Gilbert, AZ (US);
Jijun Sun, Chandler, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Renu W. Dave, Chandler, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Jason A. Janesky, Gilbert, AZ (US);
JiJun Sun, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation H≈(Hsat−Nσ)−(Hsw+Nσ), whereHswis a mean switching field for the array,Hsatis a mean saturation field for the array, and Hsw for each memory element is represented by the equation H≅√{square root over (HH)}, where Hrepresents a total anisotropy and Hrepresents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. H, H, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.