The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
May. 25, 2004
Joo Ho Lee, Kyungki-do, KR;
Joo Ho Lee, Kyungki-do, KR;
Samsung Electro-Mechanics Co., LTD, Kyungki-Do, KR;
Abstract
A method for fabricating an FBAR device includes (a) preparing a substrate; (b) forming an insulating layer on the substrate; (c) forming a sacrificial layer on the insulating layer; (d) forming a plurality of sacrificial regions for forming air-gaps by selectively removing the sacrificial layer; (e) forming a membrane support layer on the insulating layer with the selectively removed sacrificial layer; (f) forming a membrane layer on the sacrificial regions and the membrane support layer; (g) forming a plurality of active regions on the sacrificial regions of the membrane layer so that a thickness of the active region corresponding to a series resonator differs from a thickness of the active region corresponding to a shunt resonator of the FBAR; (h) forming lower electrodes on the membrane layer including the active regions; (i) forming a piezoelectric layer on the lower electrodes; (j) forming upper electrodes on the piezoelectric layer; and (k) forming the air-gaps by removing the sacrificial regions.