The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Jul. 15, 2004
Jong-cheol Kim, Suwon-si, KR;
Jong-Cheol Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor integrated circuit having a reverse engineering protection part that can be easily implemented without additional circuitry or process using a method for protecting against reverse engineering of the semiconductor integrated circuit. The semiconductor integrated circuit includes a logic gate and a reverse engineering protection part. The reverse engineering protection part alters the apparent Boolean functions of a logic gate. Further, the reverse engineering protection part includes at least one PMOS transistor and at least one NMOS transistor. The PMOS and NMOS transistors are constructed to remain in a state of constant on or off irrespective of an input signal applied to their gates. The PMOS transistors and the NMOS transistors are included in transistors forming the logic gate. The PMOS transistors and the NMOS transistors that remain in a state of constant on or off are formed by implanting ions into their gate channels or blocking ion implantation into their gate channels during manufacturing.