Method and corresponding circuit structure to correlate the transconductance of transistors of different types

Abstract

A method and related circuit structure correlate the transconductance value of transistors of different type, for example MOS transistors and bipolar transistors. The structure comprises a first differential cell formed by transistors of the first type and a second differential cell formed by transistors of the second type connected to each other by means of a circuit portion responsible for calculating an error signal obtained as difference between the cell differential currents and applied to said first differential cell and to an output node of the same circuit structure obtaining a transconductance correlation independent from process tolerances and temperature.