The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Jul. 03, 2003
Applicants:
Hisao Matsutera, Tokyo, JP;
Hideaki Numata, Tokyo, JP;
Inventors:
Hisao Matsutera, Tokyo, JP;
Hideaki Numata, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer () which has a reversible free spontaneous magnetization, a fixed layer () which has fixed spontaneous magnetization, and a spacer layer () formed of non-magnetic interposed between the free layer () and the fixed layer (). The fixed layer () is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer ().