The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
May. 27, 2004
Fuja Shone, Hsinchu, TW;
Fuja Shone, Hsinchu, TW;
Skymedi Corporation, Hsinchu, TW;
Abstract
A vertical split gate memory formed in a trench of a semiconductor substrate comprises a first doping region, a second doping region, a conductive line, a conductive spacer and a conductive plug, wherein the conductive line, conductive spacer and conductive plug serve as a select gate, a floating gate and a control gate of the vertical split gate memory cell, respectively. The first doping region of a first conductive type is underneath the bottom of the trench, whereas the second doping region of the first conductive type is beside the top of the trench. The conductive line serving as the select gate is formed at the bottom of the trench and in operation relation to the first doping region. The conductive spacer is formed beside the sidewall of the trench and above the conductive line. The conductive plug is insulated from the conductive spacer and the conductive line and in operation relation to the conductive spacer.