The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Mar. 11, 2004
Rajesh S. Nair, Chandler, AZ (US);
Shanghui Larry Tu, Phoenix, AZ (US);
Zia Hossain, Tempe, AZ (US);
Mohammed Tanvir Quddus, Chandler, AZ (US);
Rajesh S. Nair, Chandler, AZ (US);
Shanghui Larry Tu, Phoenix, AZ (US);
Zia Hossain, Tempe, AZ (US);
Mohammed Tanvir Quddus, Chandler, AZ (US);
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate structure controls at least one sub-surface channel region. The body of semiconductor material provides sub-surface drift regions to reduce on resistance without increasing device area.