The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2006

Filed:

Oct. 15, 2004
Applicants:

Tadayoshi Muta, Saitama, JP;

Jin Tachikawa, Tokyo, JP;

Riichi Saito, Kanagawa, JP;

Tadanori Suto, Tokyo, JP;

Manabu Takayama, Kanagawa, JP;

Hiroyuki Morimoto, Ibaraki, JP;

Inventors:

Tadayoshi Muta, Saitama, JP;

Jin Tachikawa, Tokyo, JP;

Riichi Saito, Kanagawa, JP;

Tadanori Suto, Tokyo, JP;

Manabu Takayama, Kanagawa, JP;

Hiroyuki Morimoto, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.


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