The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Aug. 11, 2004
Applicants:
Jun-young Kim, Gyeonggi-do, KR;
Byoung-lyong Choi, Seoul, KR;
Eun-kyung Lee, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
Quick Actions:
Kim, Jun-young. (2006). Contact structure of semiconductor device and method of forming the same (U.S. Patent No. 7125797). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7125797
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile