The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Nov. 22, 2004
Nai-hao Kuo, Hsinchu, TW;
Kai-hsiang Yen, Hsinchu, TW;
Jing-hung Chiou, Hsinchu, TW;
Po-hao Tsai, Hsinchu, TW;
Yuh-wen Lee, Hsinchu, TW;
Nai-Hao Kuo, Hsinchu, TW;
Kai-Hsiang Yen, Hsinchu, TW;
Jing-Hung Chiou, Hsinchu, TW;
Po-Hao Tsai, Hsinchu, TW;
Yuh-Wen Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.