The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Jun. 09, 2004
Cheng-chung Hsieh, TaiChung, TW;
Jia-chong Ho, Taipei, TW;
Tarng-shiang HU, Hsinchu, TW;
Cheng-chung Lee, TaiTung, TW;
Liang-ying Huang, Hsinchu, TW;
Wei-ling Lin, NanTou, TW;
Wen-kuei Huang, ChiaYi, TW;
Cheng-Chung Hsieh, TaiChung, TW;
Jia-Chong Ho, Taipei, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Cheng-Chung Lee, TaiTung, TW;
Liang-Ying Huang, Hsinchu, TW;
Wei-Ling Lin, NanTou, TW;
Wen-Kuei Huang, ChiaYi, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.