The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Dec. 01, 2004
Young Ho Hong, Gumi, KR;
Ill Soo Choi, Gumi, KR;
Sang Hee Kim, Seoul, KR;
Man Seok Kwak, Daejeon-si, KR;
Hong Woo Lee, Gumi, KR;
Young Ho Hong, Gumi, KR;
Ill Soo Choi, Gumi, KR;
Sang Hee Kim, Seoul, KR;
Man Seok Kwak, Daejeon-si, KR;
Hong Woo Lee, Gumi, KR;
Siltron Inc., Gumi, KR;
Abstract
The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile