The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Mar. 01, 2004
Applicants:
Shuichi Hirukawa, Nara, JP;
Hidenori Kawanishi, Oxford, GB;
Katsuhiko Kishimoto, Nara, JP;
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor laser device having an oscillation wavelength of larger than 760 nm and smaller than 800 nm, on an n-type GaAs substrate (), there are stacked in sequence an n-type first and second lower cladding layers (), a lower guide layer (), a strained InGaAsP multiquantum well active layer (), an upper guide layer (), and a p-type upper cladding layer (). Since the lower guide layer () is formed of InGaP, leakage of carriers from an active region is reduced. Also, since the upper guide layer () is formed of AlGaAs, an overflow of carriers (electrons in particular) is suppressed.