The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Oct. 17, 2003
Michael Howard Leary, Mountain View, CA (US);
Danny E. Mars, Los Altos, CA (US);
Sungwon David Roh, San Jose, CA (US);
Danielle R. Chamberlin, San Mateo, CA (US);
Ying-lan Chang, Cupertino, CA (US);
Michael Howard Leary, Mountain View, CA (US);
Danny E. Mars, Los Altos, CA (US);
Sungwon David Roh, San Jose, CA (US);
Danielle R. Chamberlin, San Mateo, CA (US);
Ying-Lan Chang, Cupertino, CA (US);
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.