The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7123510 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 17, 2006

Filed:

Feb. 16, 2005
Applicants:

Makoto Kojima, Suita, JP;

Takafumi Maruyama, Ibaraki, JP;

Inventors:

Makoto Kojima, Suita, JP;

Takafumi Maruyama, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plurality of memory cells are connected between two adjacent sub-bit lines. A row decoderselects a word line connected to a memory cell to be read. A selection line selection circuitand a column selection circuitinclude first and second selection portions that perform selection operations simultaneously and independently. The first selection portion selects a first pair of main bit lines and selection lines in order to select the memory cell to be read. The second selection portion selects a second pair of main bit lines that is different from the first pair of main bit lines and selection lines for selecting a sector different from that for the memory cell to be read in order to select a line to be used for reading a reference voltage.


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Kojima, Makoto. (2006). Non-volatile semiconductor memory device (U.S. Patent No. 7123510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7123510

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