The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Oct. 12, 2004
Hisatada Miyatake, Ohtsu, JP;
Kohki Noda, Fujisawa, JP;
Toshio Sunaga, Ohtsu, JP;
Hiroshi Umezaki, Fujisawa, JP;
Hideo Asano, Machida, JP;
Koji Kitamura, Kusatsu, JP;
Hisatada Miyatake, Ohtsu, JP;
Kohki Noda, Fujisawa, JP;
Toshio Sunaga, Ohtsu, JP;
Hiroshi Umezaki, Fujisawa, JP;
Hideo Asano, Machida, JP;
Koji Kitamura, Kusatsu, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SCand SC. The sub-cell SCincludes magneto resistive elements MTJand MTJand a selection transistor Tr, and the sub-cell SCincludes magneto resistive elements MTJand MTJand a selection transistor Tr. The magneto resistive elements MTJand MTJare connected in parallel, and the magneto resistive elements MTJand MTJare also connected in parallel. Further, the sub-cells SCand SCare connected in series between the write/read bit line BLW/R and the ground.