The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Sep. 29, 2004
In-sang Song, Seoul, KR;
Young-il Kim, Suwon, KR;
Moon-chul Lee, Sungnam, KR;
Dong-ha Shim, Seoul, KR;
Young-tack Hong, Suwon, KR;
Sun-hee Park, Yongin, KR;
Kuang-woo Nam, Yongin, KR;
In-sang Song, Seoul, KR;
Young-il Kim, Suwon, KR;
Moon-chul Lee, Sungnam, KR;
Dong-ha Shim, Seoul, KR;
Young-tack Hong, Suwon, KR;
Sun-hee Park, Yongin, KR;
Kuang-woo Nam, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.